| PART |
Description |
Maker |
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
From old datasheet system
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FCA16N60N |
600V N-Channel MOSFET SupreMOS™; 3-TO-3PN 16 A, 600 V, 0.199 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel MOSFET 600V, 16A, 0.170W
|
Fairchild Semiconductor, Corp.
|
| HGTP20N60A4 HGTG20N60A4 FN4781 |
600V/ SMPS Series N-Channel IGBTs
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBTs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FCH20N60NBSP FCA20N60NBSP FCH20N60 FCA20N60 |
600V N-Channel SuperFET
600V N-Channel MOSFET
From old datasheet system
|
Fairchild Semiconductor
|
| FQT1N60C FQT1N60CTF-WS |
N-Channel QFETMOSFET 600V, 0.2A, 11.5
N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm
|
Fairchild Semiconductor
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STP4NC60A STP4NC60AFP STB4NC60A-1 |
N-CHANNEL 600V 1.8 OHM 4.2A TO-220/TO-220FP/I2PAK POWERMESH II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMeshII MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A TO-220/TO-220FP/I2PAK POWERMESH II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET
32BIT MCU,GPT,SIM,QSM N沟道600V 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh第二MOSFET的⑩
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| HGTG40N60B3 FN3943 |
70A, 600V, UFS Series N-Channel IGBT(70A, 600V锛?娌??缁????????浣??)
70A, 600V, UFS Series N-Channel IGBT(70A, 600V，N沟道绝缘栅双极晶体管) 70 A, 600 V, N-CHANNEL IGBT, TO-247
From old datasheet system
|
HARRIS SEMICONDUCTOR
Intersil, Corp.
Intersil Corporation
|
| FQB6N60 FQI6N60 FQB6N60TM FQB6N60TMNL |
600V N-Channel QFET
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SSW10N60B SSI10N60B SSI10N60BTU SSW10N60BTM |
600V N-Channel B-FET
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
